Title :
Optical and electrical properties of amorphous CuAlO2 thin film deposited by RF magnetron sputtering
Author :
Nandy, S. ; Maiti, U.N. ; Ghosh, C.K. ; Chattopadhyay, K.K.
Author_Institution :
Jadavpur Univ., Kolkata
Abstract :
Defects chemistry plays an important role in the origin of p-type conductivity in transparent CuAlO2 thin films. CuAlO2 thin film was deposited at room temperature by RF magnetron sputtering on glass and silicon substrates. Films were deposited with various O2 partial pressures in the Ar+O2 atmosphere. UV-Vis spectrophotometric measurement indicated the films were having transparency above 75% in the visible region and the tauc gap was 1.6 eV. The room temperature electrical conductivity of the film was 0.32 S cm-1.
Keywords :
aluminium compounds; amorphous semiconductors; copper compounds; electrical conductivity; semiconductor growth; semiconductor thin films; sputter deposition; CuAlO2; RF magnetron sputtering; amorphous thin film; electrical conductivity; glass substrates; p-type conductivity; silicon substrates; spectrophotometric measurement; Amorphous magnetic materials; Amorphous materials; Chemistry; Conductivity; Glass; Optical films; Radio frequency; Semiconductor thin films; Sputtering; Temperature; AmorphousCuAlO2; Electrical Conductivity; Optical properties; Thin film;
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
DOI :
10.1109/IWPSD.2007.4472544
