Synthesis and characterization of Cd1-xZnxS ternary nanocrystals

Author

Sethi, R. ; Kumar, L. ; Sharma, P.K. ; Mishra, P. ; Pandey, A.C.

Author_Institution

Nanophosphor Applic. Centre, New York

fYear

2007

fDate

16-20 Dec. 2007

Firstpage

472

Lastpage

474

Abstract

II-VI wide band gap semiconductors and their properties are of great interest for various optoelectronic and solid-state lighting applications. We have synthesized a series of high quality mono-dispersed Cd_1-xZn_xS (0lestimesles1.0) quantum dots by co-precipitation method at 6degC temperature. X-ray diffraction (XRD), Small angle X-ray scattering (SAXS) and UV-Visible spectrophotometer was used to characterize the sample. X-ray diffractometer confirm the formation of Cd_1-xZn_xS alloy. All the composition have an average grain size of the order of 4 nm and show a shifting in diffraction peaks towards higher 2thetas values by increase in Zn content. The composition dependence of the band gap energy in the ternary system was determined by optical transmission, which shows that the band gap varies linearly with x from 4.1 ev (Eg for ZnS) to 2.6 ev (Eg for CdS).

Keywords

II-VI semiconductors; X-ray diffraction; X-ray scattering; cadmium compounds; energy gap; grain size; nanoparticles; precipitation; semiconductor quantum dots; spectrophotometry; ultraviolet spectra; visible spectra; wide band gap semiconductors; zinc compounds; Cd_1-xZn_xS; II-VI wide band gap semiconductors; UV-Visible spectrophotometer; X-ray diffraction; XRD; band gap energy; co-precipitation method; grain size; mono-dispersed quantum dots synthesis; optical transmission; optoelectronic lighting applications; semiconductor nanoparticles; small angle X-ray scattering; solid-state lighting applications; temperature 6 C; ternary nanocrystal characterization; Grain size; Optical diffraction; Photonic band gap; Quantum dots; Solid state lighting; Temperature; Wide band gap semiconductors; X-ray diffraction; X-ray scattering; Zinc; Nanoparticles; Small Angle X-Ray Scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on

Conference_Location

Mumbai

Print_ISBN

978-1-4244-1728-5

Electronic_ISBN

978-1-4244-1728-5

Type

conf

DOI

10.1109/IWPSD.2007.4472553

Filename

4472553