Title :
Low power frequency dividers in SiGe:C BiCMOS technology
Author :
Wang, Li ; Sun, Yao-Ming ; Borngraeber, Johannes ; Thiede, Andreas ; Kraemer, Rolf
Author_Institution :
IHP GmbH, Frankfurt
Abstract :
This paper reports a 71 GHz static and a 103 GHz regenerative dynamic frequency divider fabricated in 0.25 mum SiGe:C HBT technology with fT/fmax200 GHz. The static divider including the buffer works with a 3.5 V single supply voltage and consumes 140 mW with 42 mW for the master-slave flip-flop (FF). The high speed/power ratio makes it attractive for high-frequency wireless communication systems. The dynamic frequency divider operates from 24 GHz to 103 GHz with 5.2 V voltage supply and consumes 195 mW including the buffer with 41 mW for the divider core, and it can be applied at higher frequencies in low power millimeter wave systems
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; bipolar integrated circuits; carbon; flip-flops; frequency dividers; heterojunction bipolar transistors; low-power electronics; millimetre wave frequency convertors; 0.25 micron; 200 GHz; 24 to 103 GHz; 3.5 to 5.2 V; 41 to 195 mW; BiCMOS technology; SiGe:C; frequency dividers; heterojunction bipolar transistors; master-slave flip-flop; millimeter wave systems; wireless communication systems; BiCMOS integrated circuits; Frequency conversion; Heterojunction bipolar transistors; Master-slave; Millimeter wave communication; Millimeter wave integrated circuits; Millimeter wave radar; Millimeter wave technology; Vehicle dynamics; Voltage;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2006. Digest of Papers. 2006 Topical Meeting on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-9472-0
DOI :
10.1109/SMIC.2005.1587995
