Title :
1 GHz opamp-based bandpass filter
Author :
Ng, G. ; Lai, B. ; Liu, P. ; Voinigescu, S.P.
Author_Institution :
Edward S. Rogers Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada
Abstract :
A biquad bandpass filter, operating at 1 GHz with 9 dB gain, was designed and fabricated in 180nm SiGe BiCMOS technology. It relies on a 11-GHz unity-gain-bandwidth, highly stable opamp implemented using a MOS-HBT cascode stage with cascode p-MOSFET load and common-mode-feedback. The filter has tunable bandwidth and tunable center frequency and marks a radical approach to the design a bandpass filter operating in the gigahertz range.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; MOSFET; UHF filters; band-pass filters; biquadratic filters; heterojunction bipolar transistors; operational amplifiers; 1 GHz; 11 GHz; 180 nm; 9 dB; BiCMOS technology; MOS-HBT cascode stage; SiGe; biquad bandpass filter; cascode p-MOSFET load; common-mode-feedback; operational amplifiers; Band pass filters; Bandwidth; BiCMOS integrated circuits; Feedback; Frequency; Germanium silicon alloys; MOSFET circuits; RLC circuits; Silicon germanium; Tunable circuits and devices;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2006. Digest of Papers. 2006 Topical Meeting on
Print_ISBN :
0-7803-9472-0
DOI :
10.1109/SMIC.2005.1587998
