Title :
MOVPE growth and optimization of GRINSCH single quantum well AlGaAs/GaAs laser diodes
Author :
Bag, Rajesh K. ; Tyagi, Renu ; Haldar, T. ; Singh, Mahavir ; Mohan, Premila ; Mishra, Puspashree ; Muralidharan, R.
Author_Institution :
Solid State Phys. Lab., Delhi
Abstract :
In the present paper we report the MOVPE growth of GaAs/AlGaAs graded-index separate confinement heterostructure (GRINSCH) single quantum well (SQW) laser structure at relatively low temperature. Low temperature growth was possible by controlling various growth parameters as well as external sources of oxygen contamination. The grown structures were characterized by photoluminescence (PL) and high resolution X-ray diffraction (HRXRD) technique. Stripe geometry laser diodes were fabricated on the grown structures. The laser parameters such as threshold current, slope efficiency and peak power were measured.
Keywords :
MOCVD; X-ray diffraction; photoluminescence; semiconductor lasers; semiconductor quantum wells; vapour phase epitaxial growth; AlGaAs; MOVPE growth; X-ray diffraction; graded-index separate confinement heterostructure; laser diode; laser structure; peak power; photoluminescence; single quantum well; slope efficiency; threshold current; Contamination; Diode lasers; Epitaxial growth; Epitaxial layers; Gallium arsenide; Photoluminescence; Quantum well lasers; Temperature control; X-ray diffraction; X-ray lasers; GRINSCH; GaAs/AlGaAs; Laser diode; MOVPE; SQW;
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
DOI :
10.1109/IWPSD.2007.4472564
