Experimental characterization of insulated gate power components: capacitive aspects

Author

Lembeye, Y. ; Schanen, J.L. ; Keradec, J.P.

Author_Institution

Lab. d´´Electrotech., CNRS, Grenoble, France

Volume

2

fYear

1997

fDate

5-9 Oct 1997

Firstpage

983

Abstract

In this paper, the parasitic capacitive behaviour of insulated gate power modules (MOSFET, IGBT, MCT, etc.) is presented. First, a theory on nonlinear electrostatic quadripoles is developed. Secondly, based on this theory, an original experimental characterization method is presented. Results provide more information than manufacturer datasheets, which makes the method very interesting for designers. Finally, the influence of the two potentials V_ce and V_ge on capacitor values is analysed at turn on using a simple model of an IGBT

Keywords

MOS-controlled thyristors; capacitance; insulated gate bipolar transistors; power MOSFET; power bipolar transistors; semiconductor device models; semiconductor device testing; IGBT; MCT; MOSFET; experimental characterization; insulated gate power components; nonlinear electrostatic quadripoles; parasitic capacitive behaviour; Capacitors; Electrostatics; Frequency measurement; Impedance; Insulated gate bipolar transistors; Insulation; MOSFET circuits; Manufacturing; Power MOSFET; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Conference, 1997. Thirty-Second IAS Annual Meeting, IAS '97., Conference Record of the 1997 IEEE

Conference_Location

New Orleans, LA

ISSN

0197-2618

Print_ISBN

0-7803-4067-1

Type

conf

DOI

10.1109/IAS.1997.628980

Filename

628980