Luminescent behavior of MEH-PPV/porous silicon heterostructure

Author

Banerji, P. ; Mishra, J.K.

fYear

2007

fDate

16-20 Dec. 2007

Firstpage

565

Lastpage

566

Abstract

Hybrid devices formed by filling porous silicon with MEH-PPV or poly [2-methoxy-5(2-ethylhexyloxy-p- phenylenevinylene)] have been investigated in this work. Analyses of the structures by scanning electron microscopy (SEM) demonstrated that the porous silicon layer was filled by polymer with no significant change of the structures except that the polymer was infiltrated in some of the pores there by hanging the dielectric constant of the composite. The photoluminescence of the structures at 300 K showed that the emission intensity was very high as compared to that of MEH-PPV only and also blue-shift was observed. The observations were explained on the basis of the exciton transfer from porous silicon to MEH-PPV.

Keywords

elemental semiconductors; excitons; filled polymers; organic semiconductors; permittivity; photoluminescence; porous semiconductors; scanning electron microscopy; semiconductor junctions; silicon; spectral line shift; MEH-PPV-porous silicon heterostructure; SEM; Si; blue-shift; dielectric constant; emission intensity; exciton transfer; luminescent behavior; photoluminescence; poly [2-methoxy-5(2-ethylhexyloxy-p-phenylenevinylene)]; scanning electron microscopy; temperature 300 K; Coatings; Dielectric constant; Filling; Indium tin oxide; Luminescence; Photoluminescence; Polymer films; Scanning electron microscopy; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on

Conference_Location

Mumbai

Print_ISBN

978-1-4244-1728-5

Electronic_ISBN

978-1-4244-1728-5

Type

conf

DOI

10.1109/IWPSD.2007.4472578

Filename

4472578