Critical evaluation of IGBT performance in zero current switching environment

Author

Trivedi, Malay ; Shenai, Krishna ; Larson, Eric

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Illinois Univ., Chicago, IL, USA

Volume

2

fYear

1997

fDate

5-9 Oct 1997

Firstpage

989

Abstract

This paper reports the internal carrier dynamics of IGBTs under zero current switching conditions. The ZCS performance of a punch-through IGBT is studied with the aid of extensive measurements and numerical simulations. Simulation results are shown to agree with measured waveforms. It is shown that carrier removal in the no-current regime of ZCS turn-off can be utilised to reduce the turn-off power loss of IGBTs in ZCS applications

Keywords

bipolar transistor switches; insulated gate bipolar transistors; numerical analysis; power bipolar transistors; power semiconductor switches; semiconductor device models; semiconductor device testing; switching; applications; carrier removal; critical performance evaluation; internal carrier dynamics; measured waveforms; measurements; numerical simulations; power IGBTs; punch-through IGBT; turn-off power loss; zero current switching; Circuit testing; Inductors; Insulated gate bipolar transistors; Numerical simulation; Semiconductor devices; Switches; Switching circuits; Temperature; Zero current switching; Zero voltage switching;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Conference, 1997. Thirty-Second IAS Annual Meeting, IAS '97., Conference Record of the 1997 IEEE

Conference_Location

New Orleans, LA

ISSN

0197-2618

Print_ISBN

0-7803-4067-1

Type

conf

DOI

10.1109/IAS.1997.628981

Filename

628981