Title :
Improved efficiency of Organic Light Emitting Diodes by doping of hole transport layer
Author :
Srivastava, Ritu ; Rai, Virendra Kumar ; Chauhan, Gayatri ; Kumar, Pankaj ; Chand, Suresh ; Kamalasanan, M.N. ; Kumar, Vikram
Author_Institution :
Nat. Phys. Lab., New Delhi
Abstract :
The electrical doping process in OLED has been investigated by doping of 0.4 wt % of 2,3,5,6- tetrafluoro - 7,7´,8,8´ -tetracyano-quinodimethane( F4-TCNQ) in hole transport layer (alphaplusmn-NPD). The OLED devices with a structure of ITO/pure:doped alpha-PD/Ir(ppy)3:CBP/BCP/Alq3/LiF/Al were fabricated using this combination of HTL with green emitting electrophosphorescent material Ir(ppy)3 doped in CBP. The J-V-L characteristics and device efficiencies with and without doping of HTL has been measured. It was found that the doping increases the device current and device efficiency at lower applied voltages.
Keywords :
doping; hole mobility; optical polymers; organic light emitting diodes; 2,3,5,6- tetrafluoro - 7,7´,8,8´ -tetracyano-quinodimethane; CBP; HTL; J-V-L characteristics; electrical doping process; green emitting electrophosphorescent material; hole transport layer; organic light emitting diodes; Business continuity; Doping; Indium tin oxide; Laboratories; Organic electronics; Organic light emitting diodes; Organic materials; Sea measurements; Spectroscopy; Voltage;
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
DOI :
10.1109/IWPSD.2007.4472593
