Fin shape influence on the analog performance of standard and strained MuGFETs

From the analog performance perspective, there is a fin cross-section shape influence on electric parameters. At weak inversion levels the g_m/I_D is shape dependent, while for moderate and strong inversions the strain type is dominant, where the mobility starts to play an important role. The output conductance and the Early voltage show a strong dependence on both fin shape and strain type. For thinner W_mid there is a performance increase of up to 3 dB on intrinsic voltage gain compared to rectangular shape. Strained devices present better A_V and f_T, both following the g_m tendency for each channel length.