DocumentCode :
3174209
Title :
Comparison between the behavior of submicron graded-channel SOI nMOSFETs with fully- and partially-depleted operations in a wide temperature range
Author :
de Souza, M. ; Emam, M. ; Vanhoenacker-Janvier, D. ; Raskin, J.P. ; Flandre, D. ; Pavanello, M.A.
Author_Institution :
Dept. of Electr. Eng., Centro Univ. da FEI, Sao Bernardo do Campo, Brazil
fYear :
2010
fDate :
11-14 Oct. 2010
Firstpage :
1
Lastpage :
2
Abstract :
In this work electrical properties of GC SOI nMOSEETs from two different technologies were presented for temperatures ranging between 90K and 380K. It has been shown that the increase of mobility with temperature reduction is larger than for devices with lighter dopind levels. Heavily doped GC from transistors shown constant threshold voltage over the entire temperature range, as it lies close to the ZTC point. Although the temperature lowering leads devices to operate in full depletion, GC devices with thin gate oxide presented GΓFBE effect due to the leakage current reduction. The subthreshold swing of heavily doped GC transistors have shown to depart the theoretical limit for T higher than 250K, indicating a change in the operation mode from fully to partially-depleted.
Keywords :
MOSFET; silicon-on-insulator; doped GC transistor; dopind level; fullyand partially-depleted operation; mobility; submicron graded-channel SOI nMOSFET; temperature reduction; threshold voltage; wide temperature range; Doping; Logic gates; MOSFETs; Temperature distribution; Threshold voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference (SOI), 2010 IEEE International
Conference_Location :
San Diego, CA
ISSN :
1078-621x
Print_ISBN :
978-1-4244-9130-8
Electronic_ISBN :
1078-621x
Type :
conf
DOI :
10.1109/SOI.2010.5641388
Filename :
5641388
Link To Document :
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