• DocumentCode
    3174249
  • Title

    Mobility improvement in nanowire junctionless transistors by uniaxial strain

  • Author

    Raskin, J.P. ; Colinge, J.P. ; Ferain, I. ; Kranti, P. ; Lee, C.-W. ; Dehdashti, N. ; Yan, R. ; Razavi, P. ; Yu, R.

  • Author_Institution
    Inf. & Commun. Technol., Electron. & Appl. Math., Univ. Catholique de Louvain, Louvain-la-Neuve, Belgium
  • fYear
    2010
  • fDate
    11-14 Oct. 2010
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    Improvement of current drive in n- and p-type silicon junctionless MOSFETs using strain is demonstrated. The extracted piezoresistance coefficients are in good agreement with the piezoresistive theory and the published coefficients for bulk silicon even for 10 nm-thick silicon nanowires as narrow as 20 nm.
  • Keywords
    MOSFET; elemental semiconductors; nanowires; piezoresistance; semiconductor junctions; silicon; bulk silicon; mobility improvement; n-type silicon junctionless MOSFET; nanowire junctionless transistors; p-type silicon junctionless MOSFET; piezoresistance coefficients; piezoresistive theory; silicon nanowires; uniaxial strain; Current measurement; Logic gates; MOSFETs; Piezoresistance; Silicon; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    SOI Conference (SOI), 2010 IEEE International
  • Conference_Location
    San Diego, CA
  • ISSN
    1078-621x
  • Print_ISBN
    978-1-4244-9130-8
  • Electronic_ISBN
    1078-621x
  • Type

    conf

  • DOI
    10.1109/SOI.2010.5641390
  • Filename
    5641390
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3174249