Title :
Non-linear analysis of n-type Schottky-Barrier MOSFETs
Author :
Tinoco, J.C. ; Urban, C. ; Emam, M. ; Mantl, S. ; Zhao, Q.T. ; Raskin, J.P.
Author_Institution :
Depto. de Ing. en Telecomun., Cd. Univ. Coyoacan, Mexico City, Mexico
Abstract :
In the last few years, many efforts have been made looking for the improvement of the DC and RF performance of MOS transistors. In this scope, Schottky-Barrier transistors appear as very interesting alternative to conventional devices. In this paper we present the non-linear behavior of dopant segregated n-type SB-MOSFETs with 180 nm channel length.
Keywords :
MOSFET; Schottky barriers; semiconductor doping; DC performance improvement; MOS transistor; RF performance improvement; dopant segregated n-type Schottky-barrier MOSFET; nonlinear analysis; Gain; Harmonic analysis; Harmonic distortion; MOSFETs; Performance evaluation; Radio frequency;
Conference_Titel :
SOI Conference (SOI), 2010 IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-9130-8
Electronic_ISBN :
1078-621x
DOI :
10.1109/SOI.2010.5641391
