DocumentCode :
3174387
Title :
Numerically controlled sacrificial plasma oxidation using array of electrodes for improving thickness uniformity of SOI
Author :
Sano, Y. ; Kamisaka, S. ; Yoshinaga, K. ; Mimura, H. ; Matsuyama, S. ; Yamauchi, K.
Author_Institution :
Grad. Sch. of Eng., Osaka Univ., Suita, Japan
fYear :
2010
fDate :
11-14 Oct. 2010
Firstpage :
1
Lastpage :
2
Abstract :
An array of electrodes covering one-sixth of the area of an 8" wafer was developed as a prototype system for NC sacrificial plasma oxidation. It was demonstrated that the system can be used for simultaneous NC processes by the individual control of the plasma-on time of each electrode.
Keywords :
electrodes; numerical control; oxidation; plasma applications; silicon-on-insulator; NC processes; NC sacrificial plasma oxidation; SOI; array of electrodes; individual control; numerically controlled sacrificial plasma oxidation; prototype system; thickness uniformity; Arrays; Electrodes; Oxidation; Plasmas; Process control; Silicon; Silicon on insulator technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
SOI Conference (SOI), 2010 IEEE International
Conference_Location :
San Diego, CA
ISSN :
1078-621x
Print_ISBN :
978-1-4244-9130-8
Electronic_ISBN :
1078-621x
Type :
conf
DOI :
10.1109/SOI.2010.5641395
Filename :
5641395
Link To Document :
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