DocumentCode :
3174527
Title :
One bit distributed X-band phase shifter design based on RFMEMS switches
Author :
Rangra, Kamal J. ; Debnath, Pampa
Author_Institution :
Central Electron. Eng. Res. Inst., Pilani
fYear :
2007
fDate :
16-20 Dec. 2007
Firstpage :
725
Lastpage :
728
Abstract :
This article describes the design of a one- bit low-loss X-band phase shifter based on MEMS capacitors. The phase shifter shows a phase shift of 90deg at 7.5 GHz, 135deg at 11.4 GHz and 180deg at 15 GHz with applied bias of 33.24 V. The insertion losses are less than 0.2 dB and return losses are more than 14 dB over the desirable frequency ranges from 0 to 16 GHz. Total length of 12 MEMS bridges phase shifter is 2.83 mm. At 7.5 GHz, the phase shift per unit length is 31.8deg/mm, 47.7deg/mm at 11.4 GHz and 63.6deg/mm at 15 GHz showing very large phase shift per length.
Keywords :
capacitors; microswitches; microwave phase shifters; Bragg frequency; MEMS bridges; MEMS capacitors; RF MEMS switches; frequency 11.4 GHz; frequency 15 GHz; frequency 7.5 GHz; insertion losses; one bit distributed X-band phase shifter design; return losses; voltage 33.24 V; Bridge circuits; Capacitors; Coplanar waveguides; Frequency; Insertion loss; Micromechanical devices; Microswitches; Phase shifters; Phased arrays; Switches; Bragg Frequency; Distributed Phase shifter; MEMS capacitor; RFMEMS; pull-in voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
Type :
conf
DOI :
10.1109/IWPSD.2007.4472623
Filename :
4472623
Link To Document :
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