Title :
A floating RESURF EDMOS with enhanced safe operating area
Author :
Wang, Hao ; Yoo, Abraham ; Xu, H. P Edward ; Ng, Wai Tung ; Fukumoto, Kenji ; Ishikawa, Akira ; Imai, Hisaya ; Sakai, Kimio ; Takasuka, Kaoru
Author_Institution :
Univ. of Toronto, Toronto
Abstract :
In this paper, a floating RESURF EDMOS (BV=55V, Ron,sp=36.5mOmega-mm2) with 400% enhanced Safe Operating Area (SOA) will be discussed and compared to the conventional EDMOS structure. The proposed EDMOS has both drain and source engineering to enhance SOA, not only via reducing the base resistance of the parasitic bipolar transistor, but also suppressing the base current of the parasitic bipolar transistor at high VGs and high VDs situations. Furthermore, the buried deep Nwell allow the device to have better tradeoff between breakdown voltage and on-resistance.
Keywords :
MOSFET; bipolar transistors; EDMOS transistors; breakdown voltage; floating RESURF; parasitic bipolar transistors; safe operating area; voltage 55 V; Bipolar transistors; Driver circuits; Electric breakdown; Electrons; Helium; Impact ionization; MOSFETs; Semiconductor optical amplifiers; Turning; Voltage; EDMOS; Safe Operation Area (SOA); floating RESURF; parasitic bipolar transistor;
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
DOI :
10.1109/IWPSD.2007.4472628
