DocumentCode
3174621
Title
Carrier lifetime control in power semiconductor devices
Author
Benda, V.
Author_Institution
Czech Tech. Univ. in Prague, Prague
fYear
2007
fDate
16-20 Dec. 2007
Firstpage
755
Lastpage
761
Abstract
This paper surveys the present technology of carrier lifetime control in power semiconductor devices by controlling recombination centre types and concentration. The correlation of lifetime with device properties such as on-state voltage drop, off-state leakage current and switching times of bipolar devices has been elucidated. Various techniques for preserving or reducing lifetime during semiconductor device fabrication are presented. Advantages, problems and some limits of individual techniques are discussed.
Keywords
power semiconductor devices; semiconductor device reliability; carrier lifetime control; power semiconductor devices; semiconductor device fabrication; Charge carrier lifetime; Charge carrier processes; Current density; Energy states; Power semiconductor devices; Power semiconductor switches; Radiative recombination; Semiconductor devices; Spontaneous emission; Voltage; Charge carrier lifetime; power semiconductor devices; semiconductor device fabrication;
fLanguage
English
Publisher
ieee
Conference_Titel
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location
Mumbai
Print_ISBN
978-1-4244-1728-5
Electronic_ISBN
978-1-4244-1728-5
Type
conf
DOI
10.1109/IWPSD.2007.4472629
Filename
4472629
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