Recombination process reversible to the impact ionization and its effect on the simulation of cosmic ray induced failures

If using the traditional recombination model, device simulations of the cosmic ray induced failures revealed that the shorter n^--length diode would fail more easily. However, no failure of diodes below 600 V-class, at least, has been reported yet. To explain these experimental results, a strong recombination, which gets bigger together with carrier concentrations, should be necessary. It´s because the inside of the device got uniform and stable if the generation rate and the recombination rate became equal. After the basic consideration on the reactions of carriers, the author arrived at the conclusion that it must be the direct recombination (R prop n_en_h). The simulation that used this model forecast that low voltage diodes would not be destroyed by cosmic rays. Moreover, a useful clue for the explanation of the resistivity dependency on the failure voltage of the high voltage diodes was also obtained.