Title :
Diamond Schottky diodes for power conversion
Author :
Amaratunga, Gehan A J
Author_Institution :
Univ. of Cambridge, Cambridge
Abstract :
The replacement of silicon with wide bandgap materials for fabricating power devices rated at more than 200V is a topic of much ongoing interest. The use of Si p-i-n diodes as freewheeling diodes in circuits working at very high frequencies causes significant power losses due to their bipolar turn-off. Silicon carbide Schottky barrier diodes (SBDs) rated up to 1.2kV are already commercially available. Given the superior electronic properties of single crystal diamond, SBDs in diamond could be the ideal solution in terms of increasing efficiency in power electronics.
Keywords :
Schottky diodes; diamond; elemental semiconductors; power convertors; power semiconductor diodes; silicon compounds; wide band gap semiconductors; Schottky barrier diodes; SiC; diamond Schottky diodes; power conversion; power devices; power electronics; single crystal diamond; superior electronic properties; wide bandgap materials; Doping; P-i-n diodes; Power conversion; Power engineering and energy; Schottky barriers; Schottky diodes; Silicon; Space charge; Temperature; Voltage;
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
DOI :
10.1109/IWPSD.2007.4472632
