Diamond Schottky diodes for power conversion

Author

Amaratunga, Gehan A J

Author_Institution

Univ. of Cambridge, Cambridge

fYear

2007

fDate

16-20 Dec. 2007

Firstpage

774

Lastpage

774

Abstract

The replacement of silicon with wide bandgap materials for fabricating power devices rated at more than 200V is a topic of much ongoing interest. The use of Si p-i-n diodes as freewheeling diodes in circuits working at very high frequencies causes significant power losses due to their bipolar turn-off. Silicon carbide Schottky barrier diodes (SBDs) rated up to 1.2kV are already commercially available. Given the superior electronic properties of single crystal diamond, SBDs in diamond could be the ideal solution in terms of increasing efficiency in power electronics.

Keywords

Schottky diodes; diamond; elemental semiconductors; power convertors; power semiconductor diodes; silicon compounds; wide band gap semiconductors; Schottky barrier diodes; SiC; diamond Schottky diodes; power conversion; power devices; power electronics; single crystal diamond; superior electronic properties; wide bandgap materials; Doping; P-i-n diodes; Power conversion; Power engineering and energy; Schottky barriers; Schottky diodes; Silicon; Space charge; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on

Conference_Location

Mumbai

Print_ISBN

978-1-4244-1728-5

Electronic_ISBN

978-1-4244-1728-5

Type

conf

DOI

10.1109/IWPSD.2007.4472632

Filename

4472632