Novel FLI/ODBR based LDMOSFET: A 2-D simulation study

Author

Vaid, Rakesh ; Hussain, Asgar ; Trikha, Amit ; Bhushan, Sanjeeva ; Singh, Jaspreet ; Roshan Lai ; Padha, Naresh

Author_Institution

Univ. of Jammu, Jammu

fYear

2007

fDate

16-20 Dec. 2007

Firstpage

807

Lastpage

809

Abstract

This paper presents a novel device structure for the LDMOSFET based on FLI (Floating Islands) and ODBR (Opposite Doped Buried Regions) concept The proposed new device achieves approximately 25% increase in the breakdown voltage besides improvements in the electric field and potential distributions in the drift region of the device leading to reduce the on-resistance of the proposed device. The current densities also tend to increase thus making it very attractive for variety of applications in automotive systems and computer peripherals.

Keywords

current density; electric field effects; power MOSFET; semiconductor device breakdown; semiconductor device models; FLI/ODBR; LDMOSFET; automotive systems; breakdown voltage; computer peripherals; current density; drift region; electric field; floating islands; opposite doped buried regions; potential distributions; Doping; Electric breakdown; Fabrication; Jamming; Low voltage; MOSFET circuits; Power MOSFET; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Floating Islands (FLIs); LDMOSFET; ODBR; Power MOSFET;

fLanguage

English

Publisher

ieee

Conference_Titel

Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on

Conference_Location

Mumbai

Print_ISBN

978-1-4244-1728-5

Electronic_ISBN

978-1-4244-1728-5

Type

conf

DOI

10.1109/IWPSD.2007.4472641

Filename

4472641