Title :
A new SMPS nonpunch thru IGBT replace MOSFET in SMPS high frequency applications
Author :
Francis, Richard ; Soldano, Marco
Author_Institution :
Int. Rectifier Corp., El Segundo, CA, USA
Abstract :
The continuous request from the market for higher power density and lower cost in commercial power supplies has forced semiconductor manufacturer to push device optimization to the limit or to develop new device solutions. Some of the new devices can surely improve performances, but in some cases the price to pay for increased complexity is too high. The IGBT device has a long history of success in motor drive and inverter applications, where switching frequencies are relatively low compared to SMPS. For this reason the development of new devices has always been driven by different requirements than SMPS ones. An NPT IGBT family has been developed and optimized targeting specifically SMPS applications. This paper shows the feature of this device in a critical comparison with equivalent products available on the marked today.
Keywords :
insulated gate bipolar transistors; invertors; switched mode power supplies; switching convertors; IGBT; MOSFET; SMPS; commercial power supplies; current sharing; device optimization; inverter applications; lower cost; motor drive; nonpunch through; power density; semiconductor manufacturer; switching frequencies; switching losses; tail current; Insulated gate bipolar transistors; Inverters; MOSFET circuits; Manufacturing; Motor drives; Switched-mode power supply; Switching frequency; Tellurium; Temperature; Voltage;
Conference_Titel :
Applied Power Electronics Conference and Exposition, 2003. APEC '03. Eighteenth Annual IEEE
Conference_Location :
Miami Beach, FL, USA
Print_ISBN :
0-7803-7768-0
DOI :
10.1109/APEC.2003.1179331