• DocumentCode
    3174880
  • Title

    O2 plasma induced deionization of high Ag alloy in wire bond integrated circuit

  • Author

    Shin Low ; Galen Lin ; Wu, Dennis ; Shin-Rung Chen ; Ying-Yu Lu ; Yu-Yun Liao ; Chin-Wen Lai ; Chien-Ming Chang ; Ming-Hsien Lu

  • Author_Institution
    Xilinx, San Jose, CA, USA
  • fYear
    2015
  • fDate
    26-29 May 2015
  • Firstpage
    208
  • Lastpage
    213
  • Abstract
    This paper discusses the solution of silver alloy wire deionization. Silver alloy wire has been treated as an alternative material of copper wire in substrate wire bond IC. Since copper wire is too hard to apply to thinner aluminum bond-pad thickness and weaker structure because the bonding pad encountered crack or crater easily. In addition, the hardness of silver is softer than copper wire, and silver has similar characteristic properties as gold. Thus, silver alloy wire will be a better alternative material solution instead of copper wire.
  • Keywords
    hardness; integrated circuit bonding; lead bonding; plasma materials processing; silver alloys; Ag; O2 plasma induced deionization; aluminum bond-pad thickness; bonding pad; copper wire; hardness; silver alloy wire deionization; substrate wire bond IC; wire bond integrated circuit; Electromagnetic compatibility; Gold; Hydrogen; Plasmas; Silver; Wires; Ag alloy wire; deionization;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Components and Technology Conference (ECTC) , 2015 IEEE 65th
  • Conference_Location
    San Diego, CA
  • Type

    conf

  • DOI
    10.1109/ECTC.2015.7159593
  • Filename
    7159593