DocumentCode
3174880
Title
O2 plasma induced deionization of high Ag alloy in wire bond integrated circuit
Author
Shin Low ; Galen Lin ; Wu, Dennis ; Shin-Rung Chen ; Ying-Yu Lu ; Yu-Yun Liao ; Chin-Wen Lai ; Chien-Ming Chang ; Ming-Hsien Lu
Author_Institution
Xilinx, San Jose, CA, USA
fYear
2015
fDate
26-29 May 2015
Firstpage
208
Lastpage
213
Abstract
This paper discusses the solution of silver alloy wire deionization. Silver alloy wire has been treated as an alternative material of copper wire in substrate wire bond IC. Since copper wire is too hard to apply to thinner aluminum bond-pad thickness and weaker structure because the bonding pad encountered crack or crater easily. In addition, the hardness of silver is softer than copper wire, and silver has similar characteristic properties as gold. Thus, silver alloy wire will be a better alternative material solution instead of copper wire.
Keywords
hardness; integrated circuit bonding; lead bonding; plasma materials processing; silver alloys; Ag; O2 plasma induced deionization; aluminum bond-pad thickness; bonding pad; copper wire; hardness; silver alloy wire deionization; substrate wire bond IC; wire bond integrated circuit; Electromagnetic compatibility; Gold; Hydrogen; Plasmas; Silver; Wires; Ag alloy wire; deionization;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference (ECTC) , 2015 IEEE 65th
Conference_Location
San Diego, CA
Type
conf
DOI
10.1109/ECTC.2015.7159593
Filename
7159593
Link To Document