Title :
A novel Si/sub 1-x/Ge/sub x//Si hetero-junction power diode for the fast-switching and the soft recovery
Author :
Qi, Hui ; Gao, Yong
Author_Institution :
Dept. of Electron. Eng., Xi´´an Univ. of Technol., China
Abstract :
A novel p/sup +/(Si/sub 1-x/Ge/sub x/)-n/sup -/-n/sup +/ hetero-junction power diode which has the gradual changing doping concentration in the n/sup -/-region is proposed. The device characteristics were simulated and the optimal design was given. From the result, it can be shown that the fast-switching and the soft recovery characteristics of the device are much improved but not notable changed in forward drop. The optimal design of the Ge percentage and the trade-off of the n/sup -/-region thickness for the fast-switching and the soft recovery are given.
Keywords :
Ge-Si alloys; power semiconductor diodes; semiconductor doping; semiconductor heterojunctions; Si/sub 1-x/Ge/sub x/; device characteristics; doping concentration; fast-switching; hetero-junction; optimal design; power diode; soft recovery; Doping; Frequency; Germanium silicon alloys; Leakage current; Low voltage; P-i-n diodes; Power electronics; Power engineering and energy; Silicon germanium; Switching circuits;
Conference_Titel :
Applied Power Electronics Conference and Exposition, 2003. APEC '03. Eighteenth Annual IEEE
Conference_Location :
Miami Beach, FL, USA
Print_ISBN :
0-7803-7768-0
DOI :
10.1109/APEC.2003.1179333
