A novel Si/sub 1-x/Ge/sub x//Si hetero-junction power diode for the fast-switching and the soft recovery

Author

Qi, Hui ; Gao, Yong

Author_Institution

Dept. of Electron. Eng., Xi´´an Univ. of Technol., China

Volume

2

fYear

2003

fDate

9-13 Feb. 2003

Firstpage

964

Abstract

A novel p/sup +/(Si/sub 1-x/Ge/sub x/)-n/sup -/-n/sup +/ hetero-junction power diode which has the gradual changing doping concentration in the n/sup -/-region is proposed. The device characteristics were simulated and the optimal design was given. From the result, it can be shown that the fast-switching and the soft recovery characteristics of the device are much improved but not notable changed in forward drop. The optimal design of the Ge percentage and the trade-off of the n/sup -/-region thickness for the fast-switching and the soft recovery are given.

Keywords

Ge-Si alloys; power semiconductor diodes; semiconductor doping; semiconductor heterojunctions; Si/sub 1-x/Ge/sub x/; device characteristics; doping concentration; fast-switching; hetero-junction; optimal design; power diode; soft recovery; Doping; Frequency; Germanium silicon alloys; Leakage current; Low voltage; P-i-n diodes; Power electronics; Power engineering and energy; Silicon germanium; Switching circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Power Electronics Conference and Exposition, 2003. APEC '03. Eighteenth Annual IEEE

Conference_Location

Miami Beach, FL, USA

Print_ISBN

0-7803-7768-0

Type

conf

DOI

10.1109/APEC.2003.1179333

Filename

1179333