DocumentCode
3174958
Title
High efficiency solar photovoltaic and thermo-photovoltaic device technologies
Author
Dutta, P.S.
Author_Institution
Rensselaer Polytech. Inst., Troy
fYear
2007
fDate
16-20 Dec. 2007
Firstpage
828
Lastpage
828
Abstract
This paper presents a review of various PV cell technologies, discussing advanced device structures, manufacturing processes and cell performances. The focus will be on silicon (single crystalline, polycrystalline, amorphous), III-V, II-VI, Cu-In-Ga-Se based cells. Cells and systems designs for incorporating light concentrators and for utilizing multiple light wavelengths will be discussed. For TPV applications, methods to manufacture low cost high efficiency cells based on bulk crystals of ternary III-V semiconductors will be presented. Some of our advanced cell designs for MTPV systems based on back-illumination will be shown. Higher efficiencies are predicted for TPV systems using nano-structured photonic band-gap crystal emitters (PBG-TPV). Some of the initial theoretical predictions and development of individual components for PBG-TPV and their characteristics will be discussed.
Keywords
II-VI semiconductors; III-V semiconductors; amorphous semiconductors; copper compounds; elemental semiconductors; gallium compounds; indium compounds; photonic band gap; photovoltaic cells; photovoltaic power systems; silicon; ternary semiconductors; thermophotovoltaic cells; Cu-In-Ga-Se; II-VI semiconductors; III-V semiconductors; PV cell technologies; Si; TPV applications; amorphous silicon; back-illumination; cell performances; light concentrators; manufacturing processes; nanostructured photonic band-gap crystal emitters; polycrystalline silicon; single crystalline silicon; solar photovoltaic device; thermophotovoltaic device; Amorphous materials; Costs; Crystallization; III-V semiconductor materials; Manufacturing processes; Photonic crystals; Photovoltaic systems; Semiconductor device manufacture; Silicon; Solar power generation;
fLanguage
English
Publisher
ieee
Conference_Titel
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location
Mumbai
Print_ISBN
978-1-4244-1728-5
Electronic_ISBN
978-1-4244-1728-5
Type
conf
DOI
10.1109/IWPSD.2007.4472646
Filename
4472646
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