Title :
High efficiency solar photovoltaic and thermo-photovoltaic device technologies
Author_Institution :
Rensselaer Polytech. Inst., Troy
Abstract :
This paper presents a review of various PV cell technologies, discussing advanced device structures, manufacturing processes and cell performances. The focus will be on silicon (single crystalline, polycrystalline, amorphous), III-V, II-VI, Cu-In-Ga-Se based cells. Cells and systems designs for incorporating light concentrators and for utilizing multiple light wavelengths will be discussed. For TPV applications, methods to manufacture low cost high efficiency cells based on bulk crystals of ternary III-V semiconductors will be presented. Some of our advanced cell designs for MTPV systems based on back-illumination will be shown. Higher efficiencies are predicted for TPV systems using nano-structured photonic band-gap crystal emitters (PBG-TPV). Some of the initial theoretical predictions and development of individual components for PBG-TPV and their characteristics will be discussed.
Keywords :
II-VI semiconductors; III-V semiconductors; amorphous semiconductors; copper compounds; elemental semiconductors; gallium compounds; indium compounds; photonic band gap; photovoltaic cells; photovoltaic power systems; silicon; ternary semiconductors; thermophotovoltaic cells; Cu-In-Ga-Se; II-VI semiconductors; III-V semiconductors; PV cell technologies; Si; TPV applications; amorphous silicon; back-illumination; cell performances; light concentrators; manufacturing processes; nanostructured photonic band-gap crystal emitters; polycrystalline silicon; single crystalline silicon; solar photovoltaic device; thermophotovoltaic device; Amorphous materials; Costs; Crystallization; III-V semiconductor materials; Manufacturing processes; Photonic crystals; Photovoltaic systems; Semiconductor device manufacture; Silicon; Solar power generation;
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
DOI :
10.1109/IWPSD.2007.4472646