Title :
The impact of high-κ gate dielectrics on carbon nanotube transistors
Author :
Orouji, Ali A. ; Arefinia, Zahra
Author_Institution :
Semnan Univ., Semnan
Abstract :
The potential impact of high-kappa gate dielectrics on carbon nanotube field effect transistors (CNTFETs) is studied over a wide range of dielectric permittivities using a two-dimensional model. It is found that the high-kappa CNTFETs afford high ON currents and high voltage gain. Likewise average electron velocity at the top of the barrier increases. Key transistor performance parameters, transconductance and output conductance improve for high-K CNTFETs.
Keywords :
carbon nanotubes; field effect transistors; high-k dielectric thin films; nanotube devices; permittivity; average electron velocity; carbon nanotube field effect transistors; dielectric permittivity; high-k gate dielectrics; high-kappa gate dielectrics; output conductance; transconductance; CNTFETs; Carbon nanotubes; Dielectric constant; Dielectric devices; Dielectrics and electrical insulation; Electrons; Permittivity; Transconductance; Two dimensional displays; Voltage; carbon nanotube; field effect transistor; high-κ; two-dimensional (2-D) model;
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
DOI :
10.1109/IWPSD.2007.4472648
