DocumentCode
3175090
Title
Fabrication and characterization of mixed-signal polymer-enhanced silicon interposer featuring photodefined coax TSVs and high-Q inductors
Author
Thadesar, Paragkumar A. ; Bakir, Muhannad S.
Author_Institution
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
fYear
2015
fDate
26-29 May 2015
Firstpage
281
Lastpage
286
Abstract
This paper demonstrates: (a) low-loss photodefined polymer-embedded copper vias within a 10 Ω-cm resistivity silicon to yield electrical performance similar to glass interposers; (b) coaxial polymer-embedded vias with desired wideband impedance and reduced coupling; and (c) high-Q inductors attained using the photodefined polymer-enhancement technology.
Keywords
elemental semiconductors; inductors; silicon; three-dimensional integrated circuits; high-Q inductors; low-loss photodefined polymer-embedded copper vias; mixed-signal polymer-enhanced silicon interposer; photodefined coax TSV; photodefined polymer-enhancement technology; Copper; Fabrication; Frequency measurement; Inductors; Polymers; Silicon; Through-silicon vias;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Components and Technology Conference (ECTC) , 2015 IEEE 65th
Conference_Location
San Diego, CA
Type
conf
DOI
10.1109/ECTC.2015.7159605
Filename
7159605
Link To Document