Title :
Fabrication and characterization of mixed-signal polymer-enhanced silicon interposer featuring photodefined coax TSVs and high-Q inductors
Author :
Thadesar, Paragkumar A. ; Bakir, Muhannad S.
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
This paper demonstrates: (a) low-loss photodefined polymer-embedded copper vias within a 10 Ω-cm resistivity silicon to yield electrical performance similar to glass interposers; (b) coaxial polymer-embedded vias with desired wideband impedance and reduced coupling; and (c) high-Q inductors attained using the photodefined polymer-enhancement technology.
Keywords :
elemental semiconductors; inductors; silicon; three-dimensional integrated circuits; high-Q inductors; low-loss photodefined polymer-embedded copper vias; mixed-signal polymer-enhanced silicon interposer; photodefined coax TSV; photodefined polymer-enhancement technology; Copper; Fabrication; Frequency measurement; Inductors; Polymers; Silicon; Through-silicon vias;
Conference_Titel :
Electronic Components and Technology Conference (ECTC) , 2015 IEEE 65th
Conference_Location :
San Diego, CA
DOI :
10.1109/ECTC.2015.7159605
