Title :
Stress and bowing engineering in passive silicon interposer
Author :
Detalle, Mikael ; Vandevelde, B. ; Nolmans, P. ; Miller, A. ; La Manna, A. ; Beyer, G. ; Beyne, E.
Author_Institution :
Imec vzw, Leuven, Belgium
Abstract :
Three modifications of the structure of a 4 BEOL layers with 10×100μm TSV Si interposer are proposed to mitigate the tensile stress and release the interposer warpage. By using a thicker compressive PMD layer, reducing Metal1 thickness and using a higher compressive oxide to build the BEOL, the bowing contributions of the TSV, Metal1 and Via2 to Metal4 were reduced by 75%, 37% and 120% respectively. In total, the bowing at wafer level was reduced by 75% after full interposer front side processing.
Keywords :
tensile strength; three-dimensional integrated circuits; wafer level packaging; BEOL layer structure; Si; TSV Si interposer; bowing engineering; compressive PMD layer; compressive oxide; interposer warpage; passive silicon interposer; stress engineering; tensile stress mitigation; wafer level; Dielectrics; Residual stresses; Resists; Semiconductor device modeling; Silicon;
Conference_Titel :
Electronic Components and Technology Conference (ECTC) , 2015 IEEE 65th
Conference_Location :
San Diego, CA
DOI :
10.1109/ECTC.2015.7159606
