DocumentCode
3175188
Title
Dielectric and structural properties of iron doped titanate nano-composites
Author
Singh, Davinder ; Sharma, S.D. ; Saini, K.K. ; Kant, Chander ; Singh, Nafa ; Jain, S.C. ; Sharma, Sunil Dutta
Author_Institution
Nat. Phys. Lab., New Delhi
fYear
2007
fDate
16-20 Dec. 2007
Firstpage
870
Lastpage
871
Abstract
TiO2 has been used for gas sensing devices (Mohammadi et al., 2007) photo catalytic devices (Litter and Navio, 1996) and photoelectric devices (Levy, 1997). Recently the dielectric properties of TiO2 have been of great interest for applications in the telecommunications industry due to its unusual high dielectric constant and low dielectric loss. The use of layers of high dielectric constant materials in small scale metal insulator semiconductor devices has been considered in numerous recent publications these materials unable to maintain the same capacitance density as SiO2 films but provide a smaller leakage current density. Examples of such materials include tantalum and yttrium oxides (Moon et al., 1999) and titanium dioxide which has the largest dielectric constant value varying in the range of 25-100 (Tang et al, 1997).
Keywords
iron; leakage currents; metal-insulator boundaries; nanocomposites; permittivity; titanium compounds; TiO2:Fe; dielectric constant materials; dielectric properties; leakage current density; nanocomposites; small scale metal insulator semiconductor devices; structural properties; Communication industry; Dielectric constant; Dielectric losses; Dielectric materials; High-K gate dielectrics; Inorganic materials; Iron; Metal-insulator structures; Semiconductor materials; Titanium compounds;
fLanguage
English
Publisher
ieee
Conference_Titel
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location
Mumbai
Print_ISBN
978-1-4244-1727-8
Type
conf
DOI
10.1109/IWPSD.2007.4472659
Filename
4472659
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