Necessity for quantum mechanical simulation for the future technology nodes

Author

Ray, Biswajit ; Subhakar, K. ; Mahapatra, Santanu

Author_Institution

Indian Inst. of Sci., Bangalore

fYear

2007

fDate

16-20 Dec. 2007

Firstpage

880

Lastpage

883

Abstract

In this paper we present and compare the results obtained from semi-classical and quantum mechanical simulation for a double gate MOSFET structure to analyze the electrostatics and carrier dynamics of this device. The geometries like gate length, body thickness of this device have been chosen according to the ITRS specification for the different technology nodes. We have shown the extent of deviation between the semi- classical and quantum mechanical results and hence the need of quantum simulations for the promising nanoscale devices in the future technology nodes predicted in ITRS.

Keywords

MOSFET; electrostatics; nanotechnology; quantum theory; ITRS specification; carrier dynamics; double gate MOSFET structure; electrostatics; nanoscale devices; quantum mechanical simulation; Analytical models; Boltzmann equation; Electrons; Electrostatics; Green´s function methods; MOSFET circuits; Nanoscale devices; Poisson equations; Quantum mechanics; Semiconductor device doping; Boltzmann’s Transport Equation; Double Gate MOSFET; International Technology Roadmap for Semiconductor (ITRS); Non Equilibrium Green’s Function Method;

fLanguage

English

Publisher

ieee

Conference_Titel

Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on

Conference_Location

Mumbai

Print_ISBN

978-1-4244-1728-5

Electronic_ISBN

978-1-4244-1728-5

Type

conf

DOI

10.1109/IWPSD.2007.4472662

Filename

4472662