Title :
Effects of shape, dimension and interdiffusion on the photoluminescence of III-V semiconductor quantum dots
Author :
Kumar, Subindu ; Kabi, Sanjib ; Biswas, Dipankar
Author_Institution :
Siliguri Inst. of Technol., Darjeeling
Abstract :
Interdiffusion in InxGa1-x As/GaAs QDs may occur during growth and subsequent device processing steps. As monitored through photoluminescence (PL), the experimental results on the annealing of InxGa1-x As/GaAs QDs depicts one particular phenomenon, that is, the initially observed PL spectrum is very broad. After annealing, the PL peak undergoes a blueshift and the full width at half maximum (FWHM) decreases, while there is an increase in the intensity. In this paper we have investigated the effects of interdiffusion in QDs with various shapes of theoretical and practical interest like pyramidal, truncated pyramidal and lens shaped through quantum mechanical computations.
Keywords :
III-V semiconductors; annealing; chemical interdiffusion; gallium arsenide; indium compounds; photoluminescence; semiconductor growth; semiconductor quantum dots; spectral line shift; III-V semiconductor quantum dots; InGaAs-GaAs; annealing; blueshift; interdiffusion; lens shaped QD; photoluminescence; pyramidal QD; quantum mechanical computation; semiconductor growth; truncated pyramidal QD; Annealing; Gallium arsenide; III-V semiconductor materials; Lenses; Monitoring; Photoluminescence; Quantum computing; Quantum dots; Quantum mechanics; Shape; Annealing; Photoluminescence; Quantum dots;
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
DOI :
10.1109/IWPSD.2007.4472666
