Simple theoretical analysis of the photoemission from quantum confined non-linear optical, optoelectronic and related materials

An attempt is made to study the photo emission from quantum wells (QWs) of non-linear optical materials on the basis of a newly formulated electron dispersion law considering the anisotropics of the effective electron masses, the spin-orbit splitting constants and the presence of the crystal field splitting within the framework of k,p formalism. It has been found taking quantum confined CdGaAs₂, Hg_1-xCd_xTe and In_1-xGa_xAs_yP_1-y lattice matched to InP, as examples that the photo emission exhibits plateaus as function of incident photon energy, which is important from experimental point of view. The photoemission is the greatest for QWs of ternary and least for quaternary materials. In addition, the well- known results for bulk specimens of wide-gap materials have also been obtained as special cases from our generalized expressions under certain limiting conditions.