Free carrier absorption in free standing quantum well nanostructures

Author

Bhat, J.S. ; Nesargi, R.A. ; Mulimani, B.G.

Author_Institution

Karnatak Univ., Dharwad

fYear

2007

fDate

16-20 Dec. 2007

Firstpage

915

Lastpage

918

Abstract

A calculation of free carrier absorption in a free-standing quantum well (FSQW) nanostructure due to the electron interaction with confined acoustic modes described by elastic continuum model is presented. Numerical results are given for GaAs FSQW structure for the dependence of absorption coefficient on photon frequency electron temperature and thickness of the nanostructure. The oscillatory dependence of absorption coefficient on thickness of the FSQW nanostructure is attributed to the energy dispersion of confined acoustic modes which is in contrast with the calculations based on bulk description of acoustic phonons.

Keywords

nanostructured materials; semiconductor quantum wells; absorption coefficient dependence; confined acoustic modes; elastic continuum; electron interaction; energy dispersion; free carrier absorption; free standing quantum well nanostructures; photon frequency electron temperature; Acoustic scattering; Carrier confinement; Electromagnetic wave absorption; Nanostructures; Optical scattering; Optical superlattices; Particle scattering; Phonons; Quantization; Quantum mechanics; Free carrier absorption; nanostructure;

fLanguage

English

Publisher

ieee

Conference_Titel

Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on

Conference_Location

Mumbai

Print_ISBN

978-1-4244-1728-5

Electronic_ISBN

978-1-4244-1728-5

Type

conf

DOI

10.1109/IWPSD.2007.4472672

Filename

4472672