Nanostructuring in semiconductors by swift heavy ions

There have been enormous worldwide research efforts in semiconductor nanostructures in the last decade. The basic motivation behind the study of semiconductor nanostructures is that the quantum-confinement effect in such low dimensional systems allows devices with promising properties to be engineered. Ion irradiation is a promising tool for nano-patterning of semiconductor surface because of its compatibility and reproducibility with easily controllable growth conditions. Semiconductor Surfaces(Si and GaAs) have been exposed to 100MeV Si and Au ions in the fluence range of 10¹⁰ ions cm^-2 to 10¹³ ions cm^-2. Surface morphological studies has been carried out using Atomic Force Microscopy. The formation of nano hillocks and nano dots having the dimension in few nanometer range have been observed on the irradiated surfaces. The observed features will be discussed in the realm of ion-matter interaction in MeV regime, lateral mass transport and contribution of plastic flow phenomena.