High Energy Light Ion(HELI) irradiation: Is it a novel method for material modification and defect engineering in semiconductors ?

Author

Kabiraj, D. ; Ghosh, Subhasis

Author_Institution

Accel. Centre, New Delhi

fYear

2007

fDate

16-20 Dec. 2007

Firstpage

926

Lastpage

929

Abstract

High energy light ion (HELI) irradiation has been used for modification and engineering of defects in semiconductors. Different structural and electrical characterizations have been employed to monitor the effect of irradiation. We have shown that the energy lost by HELI in GaAs and InP is not sufficient to introduce bulk defects in GaAs. In contrast, defect creation and annihilation scales with the nuclear energy loss, even the energy transfer is lower than the lattice binding energy. This observation has been corroborated by establishing the similarity between the damage creation by HELI and very low energy Ar ion irradiation, where the energy loss is predominantly by nuclear process.

Keywords

III-V semiconductors; argon; crystal binding; crystal defects; gallium arsenide; gallium compounds; ion beam effects; Ar; GaAs; InP; annihilation; defect creation; defect engineering; electrical characterizations; high energy light ion irradiation; lattice binding energy; material modification; nuclear energy loss; semiconductors; structural characterizations; Argon; Energy exchange; Energy loss; Gallium arsenide; Indium phosphide; Lattices; Monitoring; Power engineering and energy; Raman scattering; Semiconductor materials;

fLanguage

English

Publisher

ieee

Conference_Titel

Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on

Conference_Location

Mumbai

Print_ISBN

978-1-4244-1728-5

Electronic_ISBN

978-1-4244-1728-5

Type

conf

DOI

10.1109/IWPSD.2007.4472677

Filename

4472677