DocumentCode
3175515
Title
Tuning of intersubband transition in a quantum ring by external electric field
Author
Bhattacharyya, S. ; Sen, Susmita ; Das, N.R.
Author_Institution
Asansol Eng. Coll., Asansol
fYear
2007
fDate
16-20 Dec. 2007
Firstpage
930
Lastpage
933
Abstract
In this paper, energy states of electrons in a semiconductor quantum ring have been calculated in the presence of an electric field perpendicular to the plane of the ring. The external field alters the potential energy profile of the structure and thus controls the electron energy-eigenvalues inside the ring. The energy subbands are computed taking n-type GaAs quantum ring as an example. The effect of electric field is to lower the energy states of the electrons linearly at low fields and non-linearly at high fields. The energy for inter-subband transition between two lowest quantum states in the direction of the field increases with increase in electric field, which shows the possibility of fine wavelength tuning using electric fields.
Keywords
III-V semiconductors; eigenvalues and eigenfunctions; gallium arsenide; semiconductor quantum dots; GaAs; electric field; electron energy-eigenvalues; energy subbands; external electric field; fine wavelength tuning; intersubband transition tuning; n-type GaAs quantum ring; potential energy profile; semiconductor quantum ring; Electron optics; Energy states; Laser tuning; Potential energy; Quantization; Quantum computing; Quantum dot lasers; Quantum dots; Semiconductor nanostructures; Stimulated emission; Electric Field; Quantized States; Quantum Ring; Semiconductor Nanostructures; Tuning;
fLanguage
English
Publisher
ieee
Conference_Titel
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location
Mumbai
Print_ISBN
978-1-4244-1728-5
Electronic_ISBN
978-1-4244-1728-5
Type
conf
DOI
10.1109/IWPSD.2007.4472678
Filename
4472678
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