Magneto-transport and optical properties of diluted magnetic semiconductor Ga1−xMnxSb

Author

Ganesan, K. ; Bhat, H.L.

Author_Institution

Indian Inst. of Sci., Bangalore

fYear

2007

fDate

16-20 Dec. 2007

Firstpage

946

Lastpage

949

Abstract

We have studied magneto-transport and optical properties of Ga_1-xMn_xSb crystals (x = 0.01, 0.02, 0.03 and 0.04) grown by horizontal Bridgman method. Negative magnetoresistance and anomalous Hall effect have been observed below 10 K. Temperature dependence of magnetization measurement shows a magnetic ordering below 10 K which could arise from Ga_1-xMn_xSb alloy formation. Also, saturation in magnetization observed even at room temperature suggests the existence of MnSb clusters. Reduction in band gap is observed with increasing Mn concentration in the crystals. Temperature dependence of band gap follows Bose-Einstein´s model.

Keywords

Hall effect; energy gap; ferromagnetic materials; gallium compounds; magnetic semiconductors; magnetisation; magnetoresistance; manganese compounds; Bose-Einstein´s model; GaMnSb; anomalous Hall effect; band gap reduction; crystals optical properties; diluted magnetic semiconductor; ferromagnetic MnSb clusters; horizontal Bridgman method; magnetization measurement; magnetization saturation; magneto-transport properties; manganese concentration; negative magnetoresistance; temperature 293 K to 298 K; Crystals; Hall effect; Magnetic properties; Magnetic semiconductors; Magnetoresistance; Manganese alloys; Optical saturation; Photonic band gap; Saturation magnetization; Temperature dependence; Hall effect; Magnetic semiconductors; Magnetization; Magnetoresistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on

Conference_Location

Mumbai

Print_ISBN

978-1-4244-1728-5

Electronic_ISBN

978-1-4244-1728-5

Type

conf

DOI

10.1109/IWPSD.2007.4472683

Filename

4472683