Title :
A new Leff extraction approach for devices with pocket implants
Author :
Hsieh, T.S. ; Chang, Y.W. ; Tsai, W.J. ; Lu, T.C.
Author_Institution :
Dept. of Special Device & Modeling, Macronix Int. Co., Hsinchu, Taiwan
Abstract :
In this paper, we propose a new approach to extract the effective channel length of MOSFETs by a C-V method. Gate-to-substrate capacitance is measured and the effective channel length can be extracted from two devices with different gate lengths. It has been verified by both simulation and experimental data. The extracted Leff value is very close to the real metallurgical channel length, even for devices scaled down to the 0.1 μm regime. In addition, compared to the shift-and-ratio (S&R) method, which fails to extract an accurate L eff of devices with pocket implants, we prove that our approach still works well for the devices with pocket implants even down to 0.1 μm regime
Keywords :
MOSFET; capacitance; doping profiles; ion implantation; semiconductor device measurement; semiconductor device models; 0.1 micron; C-V method; MOSFETs; device scaling; effective channel length; effective channel length extraction; gate length; gate-to-substrate capacitance; metallurgical channel length; pocket implants; shift-and-ratio method; simulation; CMOS technology; Capacitance measurement; Capacitance-voltage characteristics; Data mining; Extrapolation; Implants; Leakage current; Length measurement; MOSFET circuits; Monitoring;
Conference_Titel :
Microelectronic Test Structures, 2001. ICMTS 2001. Proceedings of the 2001 International Conference on
Conference_Location :
Kobe
Print_ISBN :
0-7803-6511-9
DOI :
10.1109/ICMTS.2001.928630
