• DocumentCode
    3176037
  • Title

    FeRAM retention analysis method based on memory cell read signal voltage measurement

  • Author

    Koike, Hiroki ; Amanuma, Kazushi ; Miwa, Tohru ; Yamada, Junichi ; Toyoshima, Hideo

  • Author_Institution
    Silicon Syst. Res. Labs., NEC Corp., Sagamihara, Japan
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    37
  • Lastpage
    41
  • Abstract
    A novel retention analysis method for ferroelectric random access memory (FeRAM) has been developed, in which read signal voltages from memory cells are measured. It employs on-chip sample/hold circuits, an off-chip A/D converter, and memory LSI testing equipment. FeRAM chip reliability is estimated on the basis of FeRAM read signal voltages after retention periods of 1 day and longer. When used as a tool to estimate long-term data retention in FeRAM chips, and when used to analyze fluctuations in FeRAM cell characteristics, this method can be of significant help in improving the reliability of FeRAM chips
  • Keywords
    analogue-digital conversion; ferroelectric storage; integrated circuit measurement; integrated circuit reliability; integrated memory circuits; large scale integration; random-access storage; sample and hold circuits; test equipment; 1 day; FeRAM; FeRAM cell characteristics fluctuations; FeRAM chip reliability; FeRAM chips; FeRAM read signal voltages; FeRAM retention analysis method; ferroelectric random access memory; long-term data retention; memory LSI testing equipment; memory cell read signal voltage measurement; memory cells; off-chip A/D converter; on-chip sample/hold circuits; read signal voltages; retention analysis; retention periods; Circuit testing; Ferroelectric films; Ferroelectric materials; Fluctuations; Large scale integration; Nonvolatile memory; Random access memory; Semiconductor device measurement; Signal analysis; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronic Test Structures, 2001. ICMTS 2001. Proceedings of the 2001 International Conference on
  • Conference_Location
    Kobe
  • Print_ISBN
    0-7803-6511-9
  • Type

    conf

  • DOI
    10.1109/ICMTS.2001.928634
  • Filename
    928634