Title :
FeRAM retention analysis method based on memory cell read signal voltage measurement
Author :
Koike, Hiroki ; Amanuma, Kazushi ; Miwa, Tohru ; Yamada, Junichi ; Toyoshima, Hideo
Author_Institution :
Silicon Syst. Res. Labs., NEC Corp., Sagamihara, Japan
Abstract :
A novel retention analysis method for ferroelectric random access memory (FeRAM) has been developed, in which read signal voltages from memory cells are measured. It employs on-chip sample/hold circuits, an off-chip A/D converter, and memory LSI testing equipment. FeRAM chip reliability is estimated on the basis of FeRAM read signal voltages after retention periods of 1 day and longer. When used as a tool to estimate long-term data retention in FeRAM chips, and when used to analyze fluctuations in FeRAM cell characteristics, this method can be of significant help in improving the reliability of FeRAM chips
Keywords :
analogue-digital conversion; ferroelectric storage; integrated circuit measurement; integrated circuit reliability; integrated memory circuits; large scale integration; random-access storage; sample and hold circuits; test equipment; 1 day; FeRAM; FeRAM cell characteristics fluctuations; FeRAM chip reliability; FeRAM chips; FeRAM read signal voltages; FeRAM retention analysis method; ferroelectric random access memory; long-term data retention; memory LSI testing equipment; memory cell read signal voltage measurement; memory cells; off-chip A/D converter; on-chip sample/hold circuits; read signal voltages; retention analysis; retention periods; Circuit testing; Ferroelectric films; Ferroelectric materials; Fluctuations; Large scale integration; Nonvolatile memory; Random access memory; Semiconductor device measurement; Signal analysis; Voltage;
Conference_Titel :
Microelectronic Test Structures, 2001. ICMTS 2001. Proceedings of the 2001 International Conference on
Conference_Location :
Kobe
Print_ISBN :
0-7803-6511-9
DOI :
10.1109/ICMTS.2001.928634
