Mis-match characterization of 1.8 V and 3.3 V devices in 0.18 μm mixed signal CMOS technology

Author

Yeh, Ta-Hsun ; Lin, Jason C H ; Wong, Shyh-Chyi ; Huang, Honda ; Sun, Jack Y C

Author_Institution

Logic Technol. Dev. Div., Taiwan Semicond. Manuf. Co., Hsinchu, Taiwan

fYear

2001

fDate

2001

Firstpage

77

Lastpage

82

Abstract

This paper studies the mis-match characteristics of 1.8 V and 3.3 V multiple threshold voltage devices, including nominal V_t, medium V_t and native devices in 0.18 μm mixed signal CMOS technology for precision analog design. Three test structures, cross couple, stripe pair and parallel patterns, are presented to investigate the structure dependent mismatch behaviour. Matching characteristics of four analog parameters: V_t, I_dsat, β and G _ds, are investigated in terms of device size, layout configuration and process condition. An additional analytical model of current mis-match including V_t, β, source and drain series resistance and carrier velocity factor has been verified, in addition to global distortion of gate oxide thickness and substrate doping concentration

Keywords

CMOS integrated circuits; dielectric thin films; doping profiles; electric current; electric resistance; integrated circuit design; integrated circuit modelling; integrated circuit testing; mixed analogue-digital integrated circuits; 0.18 micron; 1.8 V; 3.3 V; analog design; analog parameters; analytical current mis-match model; carrier velocity factor; cross couple pattern; device size; drain saturation current; gate oxide thickness; global distortion; layout configuration; matching characteristics; medium threshold voltage; mis-match characteristics; mis-match characterization; mixed signal CMOS technology; multiple threshold voltage devices; nominal threshold voltage; parallel pattern; process condition; source/drain series resistance; stripe pair pattern; structure dependent mismatch behaviour; substrate doping concentration; test structures; threshold voltage; Analytical models; CMOS technology; Circuits; Current measurement; Distortion measurement; Electric variables measurement; Electrical resistance measurement; Immune system; Semiconductor device measurement; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 2001. ICMTS 2001. Proceedings of the 2001 International Conference on

Conference_Location

Kobe

Print_ISBN

0-7803-6511-9

Type

conf

DOI

10.1109/ICMTS.2001.928641

Filename

928641