Direct extraction of equivalent circuit model parameters for HBTs

Author

Uscola, Ric ; Tutt, Marcel

Author_Institution

DigitalDNA Lab., Motorola Inc., Tempe, AZ, USA

fYear

2001

fDate

2001

Firstpage

83

Lastpage

87

Abstract

An analytical method for the direct extraction of small-signal equivalent circuit model parameters for gallium arsenide heterojunction bipolar transistors has been developed. This method completely eliminates the need for parameter optimization and provides the best agreement between modeled and measured S-parameters ever reported. The resulting models have been shown to be valid from 0.5 GHz to 20 GHz. Furthermore, it works extremely well over a very broad bias range. This analytical method, which uses a hybrid T equivalent circuit, provides unique and meaningful circuit model parameters

Keywords

III-V semiconductors; S-parameters; gallium arsenide; heterojunction bipolar transistors; microwave bipolar transistors; semiconductor device measurement; semiconductor device models; 0.5 to 20 GHz; GaAs; HBTs; bias range; circuit model parameters; direct equivalent circuit model parameter extraction; equivalent circuit model parameters; gallium arsenide heterojunction bipolar transistors; hybrid T equivalent circuit; measured S-parameters; model validity; modeled S-parameters; parameter optimization; small-signal equivalent circuit model parameters; Equivalent circuits; Frequency; Gallium arsenide; Heterojunction bipolar transistors; Impedance; Laboratories; Optimization methods; Parasitic capacitance; Postal services; Scattering parameters;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 2001. ICMTS 2001. Proceedings of the 2001 International Conference on

Conference_Location

Kobe

Print_ISBN

0-7803-6511-9

Type

conf

DOI

10.1109/ICMTS.2001.928642

Filename

928642