Modeling of non-linear polysilicon resistors for analog circuit design

Author

Virkus, Rob ; Weiser, Doug ; Green, Keith ; Richardson, Donald ; Westphal, Glenn

Author_Institution

Texas Instrum. Inc., Dallas, TX, USA

fYear

2001

fDate

2001

Firstpage

89

Lastpage

91

Abstract

This paper focuses on modeling the effect of the silicide-silicon interface within a polysilicon resistor head that is typical of silicon process technologies used for precision analog circuit design. This interface introduces resistor nonlinearity over bias which can be detrimental to circuit performance, e.g. by manifesting circuit distortion. A nonlinear resistor model suitable for high-frequency circuit simulation and a methodology for obtaining model parameters are provided

Keywords

circuit simulation; elemental semiconductors; integrated circuit design; interface structure; resistors; semiconductor device measurement; semiconductor device models; silicon; Si; analog circuit design; circuit distortion; circuit performance; high-frequency circuit simulation; model parameters; modeling; nonlinear polysilicon resistor modeling; nonlinear resistor model; polysilicon resistor head; resistor bias; resistor nonlinearity; silicide-silicon interface; silicon process technologies; Analog circuits; Current measurement; Electrical resistance measurement; Immune system; Linearity; Polynomials; Resistors; SPICE; Silicon; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 2001. ICMTS 2001. Proceedings of the 2001 International Conference on

Conference_Location

Kobe

Print_ISBN

0-7803-6511-9

Type

conf

DOI

10.1109/ICMTS.2001.928643

Filename

928643