A general procedure for high-frequency noise parameter de-embedding of MOSFETs by taking the capacitive effects of metal interconnections into account

Author

Chen, Chih-Hung ; Deen, M. Jamal

Author_Institution

Dept. of Electr. & Comput. Eng., McMaster Univ., Hamilton, Ont., Canada

fYear

2001

fDate

2001

Firstpage

109

Lastpage

114

Abstract

A general procedure for the noise parameter de-embedding of MOSFETs based on cascade configurations using one “open” and two “through” dummy structures is presented. This technique does not require any equivalent circuit modeling of probe pads or metal interconnections and is verified by RF noise measurements. This procedure is also valid for designs with long interconnections at the input or output ports of a device-under-test, and for devices operated at very high frequencies

Keywords

MOSFET; capacitance; cascade networks; electric noise measurement; integrated circuit interconnections; semiconductor device measurement; semiconductor device noise; MOSFETs; RF noise measurements; capacitive effects; cascade configurations; device operating frequencies; device-under-test; high-frequency noise parameter de-embedding; input ports; interconnection length; metal interconnections; noise parameter de-embedding; open dummy structure; output ports; probe pads; through dummy structure; Admittance; Circuit noise; Equivalent circuits; Impedance; Integrated circuit interconnections; MOSFETs; Noise measurement; Probes; Radio frequency; Signal design;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 2001. ICMTS 2001. Proceedings of the 2001 International Conference on

Conference_Location

Kobe

Print_ISBN

0-7803-6511-9

Type

conf

DOI

10.1109/ICMTS.2001.928647

Filename

928647