Effects of electrical stress on the frequency performance of 0.18 μm technology NMOSFETs

Author

Naseh, Sasan ; Deen, M. Jamal ; Marinov, Ognian

Author_Institution

Dept. of Electr. & Comput. Eng., McMaster Univ., Hamilton, Ont., Canada

fYear

2001

fDate

2001

Firstpage

119

Lastpage

123

Abstract

The effects of DC hot-carrier stress on DC and RF performance of submicron LDD NMOSFETs are investigated. It is shown that transit frequency f_T decreases as transconductance g_m of the transistor is degraded with stress but it is observed that degradation of f_T versus stress time is faster than that of g _m. This was found to be due to the increase of the gate-source capacitance C_gs with stress. Threshold voltage V _th and output conductance g_ds increase and voltage gain of the device μ_f decreases with stress. Stability factors K and Δ also change toward higher stability with stress

Keywords

MOSFET; capacitance; hot carriers; microwave field effect transistors; semiconductor device reliability; semiconductor device testing; stability; 0.18 micron; DC hot-carrier stress; DC performance; LDD NMOSFETs; NMOSFETs; RF performance; electrical stress; frequency performance; gate-source capacitance; output conductance; stability factors; stress time; threshold voltage; transconductance; transistor degradation; transit frequency; voltage gain; Capacitance; Degradation; Hot carrier effects; Hot carriers; MOSFETs; Radio frequency; Stability; Stress; Threshold voltage; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 2001. ICMTS 2001. Proceedings of the 2001 International Conference on

Conference_Location

Kobe

Print_ISBN

0-7803-6511-9

Type

conf

DOI

10.1109/ICMTS.2001.928649

Filename

928649