Title :
Effects of electrical stress on the frequency performance of 0.18 μm technology NMOSFETs
Author :
Naseh, Sasan ; Deen, M. Jamal ; Marinov, Ognian
Author_Institution :
Dept. of Electr. & Comput. Eng., McMaster Univ., Hamilton, Ont., Canada
Abstract :
The effects of DC hot-carrier stress on DC and RF performance of submicron LDD NMOSFETs are investigated. It is shown that transit frequency fT decreases as transconductance gm of the transistor is degraded with stress but it is observed that degradation of fT versus stress time is faster than that of g m. This was found to be due to the increase of the gate-source capacitance Cgs with stress. Threshold voltage V th and output conductance gds increase and voltage gain of the device μf decreases with stress. Stability factors K and Δ also change toward higher stability with stress
Keywords :
MOSFET; capacitance; hot carriers; microwave field effect transistors; semiconductor device reliability; semiconductor device testing; stability; 0.18 micron; DC hot-carrier stress; DC performance; LDD NMOSFETs; NMOSFETs; RF performance; electrical stress; frequency performance; gate-source capacitance; output conductance; stability factors; stress time; threshold voltage; transconductance; transistor degradation; transit frequency; voltage gain; Capacitance; Degradation; Hot carrier effects; Hot carriers; MOSFETs; Radio frequency; Stability; Stress; Threshold voltage; Transconductance;
Conference_Titel :
Microelectronic Test Structures, 2001. ICMTS 2001. Proceedings of the 2001 International Conference on
Conference_Location :
Kobe
Print_ISBN :
0-7803-6511-9
DOI :
10.1109/ICMTS.2001.928649
