Efficient parameter extraction techniques for a new surface-potential-based MOS model for RF applications

Author

Liang, Wenzhi ; Van Langevelde, Ronald ; McCarthy, K.G. ; Mathewson, A.

Author_Institution

Nat. Microelectron. Res. Centre, Cork, Ireland

fYear

2001

fDate

2001

Firstpage

141

Lastpage

145

Abstract

Efficient parameter extraction techniques for a new surface-potential-based MOS model are outlined. The new model is suitable for RF CMOS design because it has improved modelling of surface potential, mobility and conductance. The extraction techniques are based on analytical manipulation of the model equations and allow parameters to be extracted using as few as 12 measurements per device

Keywords

CMOS integrated circuits; carrier mobility; field effect MMIC; integrated circuit design; semiconductor device measurement; semiconductor device models; surface conductivity; surface potential; RF CMOS design; RF applications; analytical manipulation; device measurements; model equations; modelling; parameter extraction techniques; surface conductance; surface mobility; surface potential; surface-potential-based MOS model; Acoustic scattering; MOS devices; Optical scattering; Parameter extraction; Phonons; Predictive models; Radio frequency; Semiconductor device modeling; Surface resistance; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 2001. ICMTS 2001. Proceedings of the 2001 International Conference on

Conference_Location

Kobe

Print_ISBN

0-7803-6511-9

Type

conf

DOI

10.1109/ICMTS.2001.928652

Filename

928652