Title :
Contact resistance measurement of a 130-nm-diameter poly-Si plug on a lightly doped single diffusion region in giga-bit DRAMs
Author :
Kasai, Naoki ; Koga, Hiroki ; Takaishi, Yoshihiro
Author_Institution :
ULSI Device Dev. Div., NEC Electron Devices, Sagamihara, Japan
Abstract :
A practical method to extract the contact resistance of a phosphorus-doped poly-Si plug formed on a lightly phosphorus-doped diffusion region in giga-bit DRAM memory cells is proposed. A contact resistance diameter of 130 nm is experimentally obtained by the substrate bias change measurement, which can separate the resistance of a bias-dependent lightly-doped diffusion layer from the total contact chain resistance. This method is effective for process technology development of a low resistance contact formation in giga-bit DRAMs
Keywords :
DRAM chips; contact resistance; diffusion; doping profiles; elemental semiconductors; integrated circuit interconnections; integrated circuit measurement; integrated circuit metallisation; silicon; 130 nm; DRAM memory cells; DRAMs; Si:P; bias-dependent lightly-doped diffusion layer resistance; contact chain resistance; contact resistance; contact resistance diameter; contact resistance measurement; lightly doped single diffusion region; lightly phosphorus-doped diffusion region; low resistance contact formation; phosphorus-doped poly-Si plug; poly-Si plug; process technology development; substrate bias change measurement; Capacitors; Circuit testing; Contact resistance; Electrical resistance measurement; Leakage current; Logic devices; Plugs; Random access memory; Ultra large scale integration; Wiring;
Conference_Titel :
Microelectronic Test Structures, 2001. ICMTS 2001. Proceedings of the 2001 International Conference on
Conference_Location :
Kobe
Print_ISBN :
0-7803-6511-9
DOI :
10.1109/ICMTS.2001.928658
