Title :
Analysis of hot carrier effects in low temperature poly-Si TFTs using device simulator
Author :
Uraoka, Y. ; Hatayama, T. ; Fuyuki, T. ; Kawamura, T. ; Tsuchihashi, Y.
Author_Institution :
Nara Inst. of Sci. & Technol., Japan
Abstract :
Hot carrier degradation in low temperature poly-Si TFTs was analyzed using a device simulator. Degradation was found to be dominated by drain avalanche hot carriers (DAHC). The LDD structure was effective for improvement of the reliability. Degradation did not depend simply on the amount of hot carriers, but it was confirmed that hot carriers above the threshold energy induce the degradation
Keywords :
cryogenic electronics; elemental semiconductors; hot carriers; semiconductor device models; semiconductor device reliability; semiconductor device testing; silicon; thin film transistors; DAHC; LDD structure; Si; device simulator; drain avalanche hot carriers; hot carrier degradation; hot carrier effects; low temperature poly-Si TFTs; reliability; Analytical models; Crystallization; Degradation; Hot carrier effects; Hot carriers; Materials science and technology; Stress; Temperature; Thin film transistors; Voltage;
Conference_Titel :
Microelectronic Test Structures, 2001. ICMTS 2001. Proceedings of the 2001 International Conference on
Conference_Location :
Kobe
Print_ISBN :
0-7803-6511-9
DOI :
10.1109/ICMTS.2001.928671
