Title :
Impact of channel length & oxide thickness variation in an asymmetric SGOI-TFET
Author :
Chander, Sweta ; Baishya, S.
Author_Institution :
ECE Dept., NIT Silchar, Silchar, India
Abstract :
In this paper we have optimized a asymmetric SGOI based TFET for low power applications with VDD = 0.5 V. Here, we have observed the variation of channel length and oxide thickness on the device which affects switching figure of merit such as subthreshold swing, Ion and Ioff. Effect of gate dielectric on the subthreshold performance of the SGOI-TFET is also observed using the Non-Local BTBT model and it is found that the ON current is enhanced with increase in relative permittivity of the gate dielectrics. Synopsys TCAD is used for various optimization of the device which shows the result with the record high Ion/Ioff ratio of 3.4×109 and the steepest average subthreshold swing of 36 mV/ decade.
Keywords :
dielectric materials; field effect transistors; permittivity; technology CAD (electronics); tunnel transistors; ON current; Synopsys TCAD; asymmetric SGOI-TFET; channel length; gate dielectric; low power applications; nonlocal BTBT model; oxide thickness variation; relative permittivity; silicon-germanium on insulator; subthreshold performance; switching figure of merit; tunnel field effect transistor; voltage 0.5 V; Dielectrics; Field effect transistors; Logic gates; Silicon; Tunneling; High-K-Dielectrics; Quantum Tunneling; Silicon Germanium on Insulator; Subthreshold Swing (SS); Tunnel FET;
Conference_Titel :
Microelectronics and Electronics (PrimeAsia), 2013 IEEE Asia Pacific Conference on Postgraduate Research in
Conference_Location :
Visakhapatnam
Print_ISBN :
978-1-4799-2750-0
DOI :
10.1109/PrimeAsia.2013.6731186
