In/Sb halo doping and replaced anneal sequence for 80 nm CMOS

Doping techniques for substrate/well, halo structure and shallow extensions were investigated regarding MOSFET miniaturization. Application of heavy ions of antimony and indium for steep retrograde substrate/well and halo structure was examined. For pMOSFET, highly angled antimony ion implantation was found effective to control short channel effect (SCE) with high drive current and low junction leakage current. In contrast, for nMOSFET, indium halo structure was not necessarily effective to control SCE. Detailed understanding of indium diffusion behavior is required. Extension doping sequence was also examined from the process integration point of view. To minimize the thermal budget for extensions, source and drain formation sequence was re-constructed. Highly activated gate electrode and shallow extensions were obtained simultaneously with CO SALICIDE process compatibility.