Title :
Compact circuit modeling of RF characteristics of 1-D nanostructures
Author_Institution :
Department of Electrical Engineering, Santa Clara University
Abstract :
Summary form only given. A method to extract compact circuit models for one-dimensional nanostructures from measured high-frequency characteristics is described. We demonstrate that a frequency-independent parallel RC circuit is the simplest model that accurately describes high-frequency electrical conduction in carbon nanofibers. The resistance is determined from dc measurement and the capacitance is extracted directly from measured S-parameters for a ground-signal-ground test structure, without using any fitting parameter. The results obtained from the circuit model for carbon nanofibers are within ±0.5 dB and ±5° of measured S-parameters up to 50 GHz. The model is further justified by examining the relationship between S and Y-parameters of the test network.
Keywords :
S-parameters; capacitance; carbon fibres; electric resistance; integrated circuit modelling; integrated circuit testing; nanoelectronics; nanofibres; radiofrequency integrated circuits; 1D nanostructure; RF characteristics; S-parameter; capacitance; carbon nanofiber; compact circuit modeling; dc measurement; frequency-independent parallel RC circuit; ground-signal-ground test structure; high-frequency electrical conduction; resistance; Capacitance measurement; Carbon; Electrical engineering; Electrical resistance measurement; Integrated circuit modeling; Nanostructures; Scattering parameters;
Conference_Titel :
Quality Electronic Design (ISQED), 2011 12th International Symposium on
Conference_Location :
Santa Clara, CA
Print_ISBN :
978-1-61284-913-3
DOI :
10.1109/ISQED.2011.5770716