Title :
CMOS diodes operating beyond avalanche frequency
Author_Institution :
Dept. of Electr. Eng., Santa Clara Univ., Santa Clara, CA, USA
Abstract :
This paper describes IMPATT diodes designed and fabricated in 0.25 μm CMOS technology to operate beyond avalanche frequency. IMPATT Impedance measurements from 40 MHz to 110 GHz confirmed avalanche frequency range from 30 GHz to 55 GHz and negative resistance tuning range from 30 GHz to 80 GHz. G&H model is verified and the impact of different device parameters are presented.
Keywords :
IMPATT diodes; millimetre wave diodes; CMOS diode; IMPATT diode; IMPATT impedance measurements; avalanche frequency; frequency 40 MHz to 110 GHz; impact avalanche transit time diode; negative resistance; Admittance; CMOS integrated circuits; CMOS technology; Junctions; Resistance; Semiconductor diodes; Voltage measurement; Avalanche Frequency; CMOS; CPW; GSG; IMPATT;
Conference_Titel :
Quality Electronic Design (ISQED), 2011 12th International Symposium on
Conference_Location :
Santa Clara, CA
Print_ISBN :
978-1-61284-913-3
DOI :
10.1109/ISQED.2011.5770746
