DocumentCode
3178166
Title
CMOS diodes operating beyond avalanche frequency
Author
Al-Attar, Talal
Author_Institution
Dept. of Electr. Eng., Santa Clara Univ., Santa Clara, CA, USA
fYear
2011
fDate
14-16 March 2011
Firstpage
1
Lastpage
6
Abstract
This paper describes IMPATT diodes designed and fabricated in 0.25 μm CMOS technology to operate beyond avalanche frequency. IMPATT Impedance measurements from 40 MHz to 110 GHz confirmed avalanche frequency range from 30 GHz to 55 GHz and negative resistance tuning range from 30 GHz to 80 GHz. G&H model is verified and the impact of different device parameters are presented.
Keywords
IMPATT diodes; millimetre wave diodes; CMOS diode; IMPATT diode; IMPATT impedance measurements; avalanche frequency; frequency 40 MHz to 110 GHz; impact avalanche transit time diode; negative resistance; Admittance; CMOS integrated circuits; CMOS technology; Junctions; Resistance; Semiconductor diodes; Voltage measurement; Avalanche Frequency; CMOS; CPW; GSG; IMPATT;
fLanguage
English
Publisher
ieee
Conference_Titel
Quality Electronic Design (ISQED), 2011 12th International Symposium on
Conference_Location
Santa Clara, CA
ISSN
1948-3287
Print_ISBN
978-1-61284-913-3
Type
conf
DOI
10.1109/ISQED.2011.5770746
Filename
5770746
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